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Reliable Assessment of Progressive Breakdown in Ultrathin MOS Gate Oxides Toward Accurate TDDB Evaluation

✍ Scribed by Tsujikawa, S.; Kanno, M.; Nagashima, N.


Book ID
118698618
Publisher
IEEE
Year
2011
Tongue
English
Weight
633 KB
Volume
58
Category
Article
ISSN
0018-9383

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