Evaluation of soft error rates using nuc
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Satoshi Abo; Naoyuki Masuda; Fujio Wakaya; Shinobu Onoda; Toshio Hirao; Takeshi
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Article
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2010
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Elsevier Science
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English
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The difference of soft error rates (SERs) in conventional bulk Si and silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm has been investigated by helium ion probes with energies ranging from 0.8 to 6.0 MeV and a dose of 75 ions/lm 2 . The SERs in the SOI