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Reliability study of bulk and SOI SRAMs using high energy nuclear probes

โœ Scribed by Satoshi Abo; Hiroto Yamagiwa; Toshiaki Iwamatsu; Shigeto Maegawa; Yutaka Arita; Takashi Ipposhi; Atsushi Kinomura; Fujio Wakaya; Mikio Takai


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
178 KB
Volume
231
Category
Article
ISSN
0168-583X

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๐Ÿ“œ SIMILAR VOLUMES


Evaluation of soft error rates using nuc
โœ Satoshi Abo; Naoyuki Masuda; Fujio Wakaya; Shinobu Onoda; Toshio Hirao; Takeshi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 399 KB

The difference of soft error rates (SERs) in conventional bulk Si and silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm has been investigated by helium ion probes with energies ranging from 0.8 to 6.0 MeV and a dose of 75 ions/lm 2 . The SERs in the SOI