The design and manufacture of reliable products is a major challenge for engineers and managers. This book arms technical managers and engineers with the tools to compete effectively through the design and production of reliable technology products.
Reliability Prediction for Microelectronics (Quality and Reliability Engineering Series)
โ Scribed by Joseph B. Bernstein, Alain Bensoussan, Emmanuel Bender
- Publisher
- Wiley
- Year
- 2024
- Tongue
- English
- Leaves
- 401
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
RELIABILITY PREDICTION FOR MICROELECTRONICS
Wiley Series in Quality & Reliability Engineering
REVOLUTIONIZE YOUR APPROACH TO RELIABILITY ASSESSMENT WITH THIS GROUNDBREAKING BOOK
Reliability evaluation is a critical aspect of engineering, without which safe performance within desired parameters over the lifespan of machines cannot be guaranteed. With microelectronics in particular, the challenges to evaluating reliability are considerable, and statistical methods for creating microelectronic reliability standards are complex. With nano-scale microelectronic devices increasingly prominent in modern life, it has never been more important to understand the tools available to evaluate reliability.
Reliability Prediction for Microelectronics meets this need with a cluster of tools built around principles of reliability physics and the concept of remaining useful life (RUL). It takes as its core subject the โphysics of failureโ, combining a thorough understanding of conventional approaches to reliability evaluation with a keen knowledge of their blind spots. It equips engineers and researchers with the capacity to overcome decades of errant reliability physics and place their work on a sound engineering footing.
Reliability Prediction for Microelectronics readers will also find:
- Focus on the tools required to perform reliability assessments in real operating conditions
- Detailed discussion of topics including failure foundation, reliability testing, acceleration factor calculation, and more
- New multi-physics of failure on DSM technologies, including TDDB, EM, HCI, and BTI
Reliability Prediction for Microelectronics is ideal for reliability and quality engineers, design engineers, and advanced engineering students looking to understand this crucial area of product design and testing.
โฆ Table of Contents
Cover
Title Page
Copyright Page
Dedication Page
Contents
Author Biography
Series Foreword
Preface
Scope
Introduction
Chapter 1 Conventional Electronic System Reliability Prediction
1.1 Electronic Reliability Prediction Methods
1.2 Electronic Reliability in Manufacturing, Production, and Operations
1.2.1 Failure Foundation
1.2.2 Reliability Foundational Models (Markovian, Gamma, Lรฉvy, Wiener Processes)
1.2.3 Correlation Versus Causation and Representativeness of Trackers
1.2.4 Functional Safety Standard ISO 26262
1.2.5 Additional Considerations
1.3 Reliability Criteria
1.3.1 The Failure Rate Curve for Electronic Systems
1.3.2 Basic Lifetime Distribution Models
1.4 Reliability Testing
1.4.1 Reliability Test Methods
1.4.2 Accelerated Testing
Chapter 2 The Fundamentals of Failure
2.1 The Random Walk
2.1.1 Approximate Solution
2.1.2 Constant Velocity
2.2 Diffusion
2.2.1 Particle Diffusion
2.3 Solutions for the Diffusion Equation
2.3.1 Normal Distribution
2.3.2 Error Function Solution
2.3.3 Finite Thickness
2.3.4 Thermal Diffusion
2.4 Drift
2.5 Statistical Mechanics
2.5.1 Energy
2.6 Chemical Potential
2.6.1 Thermodynamics
2.7 Thermal Activation Energy
2.7.1 Arrhenius Relation
2.7.2 Einstein Relation
2.7.3 Magnitude of Energy
2.8 Oxidation and Corrosion
2.8.1 Reaction Rate
2.8.2 Limiting Time Scales
2.8.3 Material Properties
2.9 Vibration
2.9.1 Oscillations
2.9.2 Multiple Resonances
2.9.3 Random Vibration
2.10 Summary
Chapter 3 Physics-of-Failure-based Circuit Reliability
3.1 Problematic Areas
3.1.1 Single-Failure Mechanism Versus Competing-Failure Mechanism
3.1.2 Acceleration Factor
3.1.3 An Alternative Acceleration Factor Calculation โ Matrix Method
3.1.4 Single-Failure Mechanism Assumption: Conventional Approach
3.1.5 Failure Rate Calculations Assuming Multiple-Failure Mechanism
3.1.6 Constant-Failure-Rate Approximation/Justification
3.1.7 Exponential Distribution and Its Characterization
3.2 Reliability of Complex Systems
3.2.1 Drenickโs Theorem
3.3 Physics-of-Failure-based Circuit Reliability Prediction Methodology
3.3.1 Methodology
3.3.2 Assembly, Materials and Processes, and Packaging
3.3.3 External Environment
3.3.4 PoF and Failure Mechanisms
3.3.5 Key Considerations for Reliability Models in Emerging Technologies
3.3.6 Input Data
3.3.7 Applicability of Reliability Models
Chapter 4 Transition State Theory
4.1 Stress-Related Failure Mechanisms
4.2 Non-Arrhenius Model Parameters
4.2.1 Hot Carrier Injection (HCI)
4.2.2 Negative Apparent EA
4.2.3 Time-Dependent Dielectric Breakdown (TDDB)
4.2.3.1 Thermochemical E-Model
4.2.3.2 1/E Model (Anode-Hole Injection Model)
4.2.3.3 Power-Law Voltage VN-Model
4.2.3.4 Exponential E1/2-Model
4.2.3.5 Percolation Model
4.2.4 Stress-Induced Leakage Current (SILC)
4.2.5 Negative Bias Temperature Instability (NBTI)
4.2.5.1 Time Dependence
4.2.5.2 1/n-Root Measurements
4.2.5.3 Voltage Power Law
4.2.6 Electromigration (EM)
4.3 Physics of Healthy
4.3.1 Definitions
4.3.2 Entropy and Generalization
Chapter 5 Multiple Failure Mechanism in Reliability Prediction
5.1 MTOL Testing System
5.1.1 Accelerated Element, Control System, and Counter
5.1.2 Separating Failure Mechanisms
5.1.3 EA and รฃ Extrapolation
5.2 MTOL Matrix: A Use Case Application
5.2.1 Effective Activation Energy Characteristics (Eyring-M-STORM Model)
5.3 Comparison of DSM Technologies (45, 28, and 20 nm)
5.3.1 BTIโs High Voltage Constant
5.4 16 nm FinFET Reliability Profile Using the MTOL Method
5.4.1 Thermal Dissipation Concerns of 16 nm Technologies
5.5 16 nm Microchip Health Monitoring (MHM) from MTOL Reliability
5.5.1 Weibull Distribution Tapering by Increasing Devices
5.5.2 The FLL Measurement Circuit
5.5.3 Degradation Data Correction with Temperature Compensation
5.5.4 Accurate Lifetime Calculations Using Early Failure
5.5.5 Algorithm to Calculate the TTF of Early Failures
5.5.6 The Microchip Health Monitor
Chapter 6 System Reliability
6.1 Definitions
6.2 Series Systems
6.2.1 Parallel Systems
6.2.2 Poisson Distribution Function
6.2.3 Weibull Distribution Function
6.2.4 Complex Systems
6.3 Weibull Analysis of Data
6.4 Weibull Analysis to Correlate Process Variations and BTI Degradation
Chapter 7 Device Failure Mechanism
7.1 Time-Dependent Dielectric Breakdown
7.1.1 Physics of Breakdown
7.1.2 Early Models for Dielectric Breakdown
7.1.3 Acceleration Factors
7.1.4 Models for Ultra-Thin Dielectric Breakdown
7.1.5 Statistical Model
7.2 Hot Carrier Injection
7.2.1 Hot Carrier Effects
7.2.2 Hot Carrier Generation Mechanism and Injection to the Gate Oxide Film
7.2.3 Hot Carrier Models
7.2.4 Hot Carrier Degradation
7.2.5 Hot Carrier Resistant Structures
7.2.6 Acceleration Factor
7.2.6.1 Statistical Models for HCI Lifetime
7.2.6.2 Lifetime Sensitivity
7.3 Negative Bias Temperature Instability
7.3.1 Physics of Failure
7.3.2 Interface Trap Generation: ReactionโDiffusion Model
7.3.3 Fixed Charge Generation
7.3.4 Recovery and Saturation
7.3.5 NBTI Models
7.3.6 Lifetime Models
7.4 Electromigration
7.4.1 Electromigration Physics
7.4.2 Lifetime Prediction
7.4.3 Lifetime Distribution Model
7.4.4 Lifetime Sensitivity
7.5 Soft Errors due to Memory Alpha Particles
Chapter 8 Reliability Modeling of Electronic Packages
8.1 Failure Mechanisms of Electronic Packages
8.2 Failure Mechanismsโ Description and Models
8.2.1 Wire Bond Failures (Wire Lifting, Broken Wires, Bond Fracture,etc.)
8.2.2 BGA and Package-on-Package Failures
8.2.3 Die Cracking Failures
8.2.3.1 Die Cracking Failure Mechanisms
8.2.4 Interface Delamination
8.2.5 Package Cracking Failure
8.2.6 Solder Joint Fatigue Failure
8.3 Failure Models
8.3.1 IMC Diffusion Models
8.3.2 Fracture Models Due to Cyclic Loads
8.3.3 Die Cracking Failure Models
8.3.4 Solder Joint Fatigue Failure Models
8.4 Electromigration
8.4.1 Electromigration Failure Description
8.4.2 Electromigration Failure Models
8.5 Corrosion Failure
8.5.1 Corrosion Failure Models
8.6 Failure Rate and Acceleration Factors
8.6.1 Creep
8.7 Reliability Prediction of Electronic Packages
8.7.1 Reliability and Failure Description
8.8 Reliability Failure Models
8.8.1 Inverse Power Law Models
8.8.2 Arrhenius Models
8.8.3 ArrheniusโWeibull Models
References
Index
EULA
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