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Reliability of gate dielectrics of MOSFETs exposed to synchrotron radiation

โœ Scribed by G.S. Kousik; R.P. Nandakumar; P.K. Bhattacharya


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
410 KB
Volume
319
Category
Article
ISSN
0168-9002

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โœ Chung-Hao Fu; Kuei-Shu Chang-Liao; Wei-Hao Tseng; Chun-Chang Lu; Tien-Ko Wang; W ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 770 KB

MOSFET devices with Ge channel and nitridation treatment using plasma immersion ion implantation (PIII) are studied in this work. Experimental results show that the electrical characteristics and reliability of Ge MOSFETs can be significantly improved by PIII nitridation. For instance, the mobility