Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling

✍ Scribed by Lavizzari, S.; Ielmini, D.; Sharma, D.; Lacaita, A.L.

• Book ID: 114619615
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 671 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2016398