Reliability analysis of AlGaN/GaN HEMT o
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N. Ronchi; F. Zanon; A. Stocco; A. Tazzoli; E. Zanoni; G. Meneghesso
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Article
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2009
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Elsevier Science
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English
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This paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of ga