✦ LIBER ✦
Relaxed GexSi1−x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition
✍ Scribed by Luo, G.L.; Chen, P.Y.; Lin, X.F.; Tsien, P.; Fan, T.W.
- Book ID
- 113035205
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 81 KB
- Volume
- 70
- Category
- Article
- ISSN
- 1432-0630
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