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Relaxation of the distribution function branch imbalanceQ*in Sn and Sn-In alloys

โœ Scribed by M. V. Moody; J. L. Paterson


Publisher
Springer US
Year
1979
Tongue
English
Weight
857 KB
Volume
34
Category
Article
ISSN
0022-2291

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โœฆ Synopsis


We have used double tunnel junctions M1-S2-N3 to measure the detector junction ( Se-N3 ) voltage at zero detector current Vd(O) vs. generator junction (MI-$2) current Ig for samples cooled by helium exchange gas. We find 9 S 2 9 A . terms both symmetric Vd(O; Ig) and asymmetric Va(O; Ig) m Ig. The term V s is attributed to a thermoelectric voltage generated in the sample; V'~ is produced by Q*, the distribution function branch imbalance, in Se. We have analyzed Q* relaxation in these samples and have compared the results with those obtained earlier by Paterson. For Sn and Sn : In alloys we find zo* = 1.1 + 0.2 โ€ข I O-~~ A( O )/ A(T) sec for T ~-To; the data at all temperatures have been compared with the calculations by Chang. The attempt to measure zo* in Pb near Tc is discussed and data are presented for V s for Pb.


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