Relaxation of the D center in amorphous silicon and how this accounts for the observed energy distributions of deep defects within the mobility gap

✍ Scribed by J. David Cohen; Thomas M. Leen; Fan Zhong

• Book ID: 115989008
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 319 KB
• Volume: 164-166
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/0022-3093(93)90556-d