zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model with the general pressure-density relation for semiconductors are established by the method of high energy estimates.
Relaxation limit and initial layer analysis of a bipolar hydrodynamic model for semiconductors
β Scribed by Yeping Li
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 738 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-7177
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