A first-principles study of the structur
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M. Scarrozza; G. Pourtois; M. Houssa; M. Caymax; A. Stesmans; M. Meuris; M.M. He
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Article
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2009
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Elsevier Science
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English
⚖ 896 KB
A theoretical study of the structural and electronic properties of the interfaces between a set of III-V compound semiconductors of technological interest and their native oxides is reported. First-principles techniques have been applied to model the reaction of oxidation of the GaAs(0 0 1)-b2(2 Â 4