Relationship between radiation damage anisotropy in MgO and YSZ single crystals and the Ion/Atom ratio deposition parameter in biaxially-textured MgO and YSZ thin films fabricated by ion beam assisted deposition
✍ Scribed by I.O. Usov; P.N. Arendt; K.E. Sickafus
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 207 KB
- Volume
- 268
- Category
- Article
- ISSN
- 0168-583X
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✦ Synopsis
To elucidate the underlying physics of ion beam assisted deposition (IBAD), irradiation damage effects in magnesia (MgO) and yttria-stabilized zirconia (YSZ) were investigated. Ion irradiations were performed on MgO and YSZ single crystals of three low-index crystallographic orientations using 100 and 150 keV Ar + ions over a fluence range from 1 Â 10 14 to 5 Â 10 16 Ar/cm 2 . Damage accumulation was analyzed using Rutherford backscattering spectrometry combined with ion channeling. Damage evolution with increasing ion fluence proceeded via several characteristic stages and the total damage exhibited a strong dependence on crystallographic orientation. For both MgO and YSZ, damage anisotropy was maximal at a stage when the damage saturated, with the (1 1 0) crystallographic orientation being the most radiation damage resistant. The Ion/Atom ratio deposition parameter reported for IBAD of MgO and YSZ films was found to correlate with the damage plateau stage described above. Finally, the role of the Ion/Atom ratio is discussed in terms of radiation damage anisotropy mechanism.