We explain the relationship between the critical temperature 7", and the modulated structure in the Bi-based compounds on the basis of a 2D electron-hole lattice model. The 2D electron-hole lattice is constructed on the Bi-O (and possibly on the Cu-O) planes to neutralize local polarization charges
Relationship between lattice relaxation and electron delocalization in diamond vacancies
β Scribed by M. Heidari Saani; K. Esfarjani; H. Hashemi; M.A. Vesaghi; A.R. Basiri
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 103 KB
- Volume
- 376-377
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
Single electron wavefunction of a vacancy in diamond lattice has been calculated in different symmetric configurations of the nearest neighbor (NN) atoms. We used ab initio density functional theory (DFT) and unrestricted Hartree-Fock (UHF) cluster methods. The variation of electron or spin localization on NN atoms have been investigated with respect to the lattice relaxation in the ground state of the neutral and negatively charged vacancy. Calculated variations are not symmetric with respect to the sign of the lattice relaxation. We obtain about 90% localization for electronic charge and spin density for the neutral and negatively charged vacancy, respectively. This is in good agreement with electron paramagnetic resonance (EPR) measurements on negatively charged vacancy. We discuss the sign of the lattice relaxation and the limitation in using only semi-empirical potentials for modeling this problem.
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