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Relationship between Electrical Activity and Grain Boundary Structural Configuration in Polycrystalline Silicon

✍ Scribed by Zhan-Jie Wang; Sadahiro Tsurekawa; Kenji Ikeda; Takashi Sekiguchi; Tadao Watanabe


Book ID
110267794
Publisher
Springer
Year
1999
Tongue
English
Weight
676 KB
Volume
7
Category
Article
ISSN
0927-7056

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## Abstract The relationship between grain‐boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO~2~Β·CoO binary polycrystalline system has been investigated by means of combined techniques such as __I__ –__V__ characteristic response, complex impedance and capacitance analys