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Relating hysteresis and electrochemistry in graphene field effect transistors

✍ Scribed by Veligura, Alina; Zomer, Paul J.; Vera-Marun, Ivan J.; Jozsa, Csaba; Gordiichuk, Pavlo I.; van Wees, Bart J.

Book ID
118130732
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
699 KB
Volume
110
Category
Article
ISSN
0021-8979

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The