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Regrowth-process study of amorphous BF2+ion-implanted silicon layers through spectroscopic ellipsometry

โœ Scribed by S. Holgado, J. Martinez, J. Garrido, J. Piqueras


Book ID
120783142
Publisher
Springer
Year
1995
Tongue
English
Weight
613 KB
Volume
60
Category
Article
ISSN
1432-0630

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Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm ร€2 up to 1e16 cm ร€2 , the associa