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Refractive index of vacuum-evaporated SiO thin films: Dependence on substrate temperature

✍ Scribed by F. López; E. Bernabéu

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
376 KB
Volume
191
Category
Article
ISSN
0040-6090

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Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30°, 400°C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C