𝔖 Bobbio Scriptorium
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Reformer development at Fraunhofer ISE

✍ Scribed by B. Vogel; A. Heinzel


Book ID
104432551
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
578 KB
Volume
1
Category
Article
ISSN
1464-2859

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GaN HEMT and MMIC development at Fraunho
✍ Waltereit, P. ;Bronner, W. ;Quay, R. ;Dammann, M. ;Kiefer, R. ;MΓΌller, S. ;Musse πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 806 KB

## Abstract We present a systematic study of epitaxial growth, processing technology, device performance and reliability of our GaN HEMTs and MMICs manufactured on 3 inch SiC substrates. Epitaxy and processing are optimized for both performance and reliability. The deposition of the AlGaN/GaN HEMT