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Reflectivity of heavily doped P and N-type silicon at the 3.4 eV and 4.5 eV peak

✍ Scribed by B.R. Bramer; G. Vertogen; P. Penning

Publisher: Elsevier Science
Year: 1963
Tongue: English
Weight: 189 KB
Volume: 1
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(63)90213-8

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