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Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers

✍ Scribed by A. Hamoudi; T. Sogawa; T. Saitoh; J. Yumoto


Book ID
106023383
Publisher
Springer
Year
1998
Tongue
English
Weight
104 KB
Volume
67
Category
Article
ISSN
1432-0630

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