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Reflectance of thinly oxidized silicon at normal incidence

✍ Scribed by Huen, Tony


Book ID
115326845
Publisher
The Optical Society
Year
1979
Tongue
English
Weight
610 KB
Volume
18
Category
Article
ISSN
1559-128X

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Silicon nitride powders have been thermally oxidized between 700 and 1200 Γ„C in a high-purity gas N 2 -20% O 2 environment. The powders were subsequently analyzed by x-ray photoelectron and Auger electron spectroscopies for evidence of oxynitride surface states. Measurements were made on the Si 2p,