Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the existence of residual structures in the energ
Reflectance of GaAs(AlGa)As disordered superlattices
β Scribed by G.F. Lorusso; F. Tassone; V. Capozzi; C. Perna; D. Martin
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 474 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Fluorescence line narrowing and excitation spectra measurements were performed on purposely disordered short period AlGaAs/GaAs superlattices at low temperature. Coupled to the effects of the purposely introduced disorder in the vertical direction, we observe the effects of non controlled statistica
A theoretical calculation of the magnetoabsorption spectra of GaAs-(Ga,Al)As superlattices under in-plane magnetic fields is performed. We consider interband transitions between electron- and hole-magnetic levels within the parabolic effective-mass approximation and with the envelope wave functions