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Reduction of VT shift due to avalanche-hot-carrier injection using graded drain structures in submicron N-channel MOSFET: M. Noyori, Y. Nakata, S. Odanaka and J. Yasui. Proc. IEEE Reliab. Phys. Conf. 205 (1984)


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
133 KB
Volume
25
Category
Article
ISSN
0026-2714

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