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Reduction of the base-collector capacitance in InP/GaInAs heterojunction bipolar transistors due to electron velocity modulation

✍ Scribed by Betser, Y.; Ritter, D.


Book ID
114537663
Publisher
IEEE
Year
1999
Tongue
English
Weight
207 KB
Volume
46
Category
Article
ISSN
0018-9383

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