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Reduction of stress at the initial stages of GaN growth on Si(111)

✍ Scribed by Dadgar, A.; Poschenrieder, M.; Reiher, A.; Blasing, J.; Christen, J.; Krtschil, A.; Finger, T.; Hempel, T.; Diez, A.; Krost, A.

Book ID: 118276960
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 352 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1534940

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