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Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique

✍ Scribed by Tohru Honda; Naoyuki Sakai; Shigetoshi Komiyama; Masato Hayashi; Tatsuhiro Igaki


Book ID
112182270
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
313 KB
Volume
9
Category
Article
ISSN
1862-6351

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