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Reduction of misfit dislocation density in strained InxGal−xAs heterostructures via growth on patterned GaAs (001) substrate

✍ Scribed by W. Zeng; S. S. Jiang; X. R. Huang; C. Ferrari; S. Gennari; G. Salviati


Publisher
Italian Physical Society
Year
1997
Tongue
English
Weight
865 KB
Volume
19
Category
Article
ISSN
0392-6737

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