Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers

✍ Scribed by Skromme, B.J.; Sasikumar, A.; Green, B.M.; Hartin, O.L.; Weitzel, C.E.; Miller, M.G.

• Book ID: 114619936
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 459 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2041868