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Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's

✍ Scribed by Shahidi, G.G.; Antoniadis, D.A.; Smith, H.I.


Book ID
114538389
Publisher
IEEE
Year
1988
Tongue
English
Weight
140 KB
Volume
35
Category
Article
ISSN
0018-9383

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