Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature

✍ Scribed by G.N Parsons; C Wang; M.J Williams; G Lucovsky

• Book ID: 115986649
• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 207 KB
• Volume: 114
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/0022-3093(89)90105-1