✦ LIBER ✦
Reduction of deep levels in MOCVD-regrown AlxGa1−xas interfaces by (NH4)2S passivation and in-situ HCl etching
✍ Scribed by G. Guel; E. A. Armour; S. Z. Sun; S. T. Srinivasan; K. J. Malloy; S. D. Hersee
- Book ID
- 112819941
- Publisher
- Springer US
- Year
- 1992
- Tongue
- English
- Weight
- 498 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0361-5235
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