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Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN

✍ Scribed by Lu, J.; Speck, J.S.; Wong, M.H.; Mishra, U.K.; Kaun, S.W.


Book ID
120771654
Publisher
The Institution of Electrical Engineers
Year
2013
Tongue
English
Weight
385 KB
Volume
49
Category
Article
ISSN
0013-5194

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