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Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr;0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

✍ Scribed by S. F. Chichibu; T. Koida; M. D. Craven; B. A. Haskell; T. Onuma; T. Sota; J. S. Speck; S. P. DenBaars; S. Nakamura


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
239 KB
Volume
2
Category
Article
ISSN
1862-6351

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