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Reduction of base-transit time of InP-GaInAs HBTs due to electron injection from an energy ramp and base-composition grading

✍ Scribed by Zohar, G.; Cohen, S.; Sidorov, V.; Gavrilov, A.; Sheinman, B.; Ritter, D.


Book ID
114617408
Publisher
IEEE
Year
2004
Tongue
English
Weight
188 KB
Volume
51
Category
Article
ISSN
0018-9383

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