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Reduction in Raman intensity of Si(1 1 1) due to defect formation during ion irradiation

✍ Scribed by K. Ishioka; K.G. Nakamura; M. Kitajima

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 435 KB
Volume: 96
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(95)00419-x

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