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Reduction in built-in polarization potentials in three vertically arranged InGaN/GaN quantum dots

✍ Scribed by Seoung-Hwan Park, Woo-Pyo Hong

Book ID
120798587
Publisher
The Korean Physical Society
Year
2013
Tongue
English
Weight
202 KB
Volume
62
Category
Article
ISSN
0374-4884

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## Abstract The built‐in potential __Ο•__~tot~ of an isolated and of three stacked lens‐shaped __c__‐plane In~0.2~Ga~0.8~N/GaN quantum dots (QDs) is calculated using a surface integral approach. There remains disagreement about the sign of the shear strain piezoelectric coefficient __e__~15~, with m