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Reducing Planar Defects in 3C–SiC

✍ Scribed by H. Nagasawa; K. Yagi; T. Kawahara; N. Hatta


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
719 KB
Volume
12
Category
Article
ISSN
0948-1907

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Carbon as an acceptor in cubic GaN/3C–Si
✍ A. Zado; E. Tschumak; J.W. Gerlach; K. Lischka; D.J. As 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 265 KB

We report on carbon doping of cubic GaN by CBr 4 using plasma-assisted molecular beam epitaxy. Cubic GaN:C samples were doped at different CBr 4 beam equivalent pressures between 2 Â 10 À 9 and 6 Â 10 À 6 mbar. The incorporated carbon concentration of up to 1 Â 10 20 cm À 3 was achieved in c-GaN:C a