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Reduced intervalley scattering rates in strained Si/SixGe1−x quantum wells and enhancement of electron mobility: A model calculation

✍ Scribed by Basu, P. K.; Paul, Sajal K.


Book ID
125835883
Publisher
American Institute of Physics
Year
1992
Tongue
English
Weight
534 KB
Volume
71
Category
Article
ISSN
0021-8979

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