Red photoluminescence and band edge shift from ZnO thin films

✍ Scribed by Ricardo E. Marotti; Juan A. Badán; Eduardo Quagliata; Enrique A. Dalchiele

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 184 KB
• Volume: 398
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.04.038

✦ Synopsis

The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed.