Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

✍ Scribed by Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Malinowski, Pawel E.; Marcon, Denis; Lenci, Silvia; Geens, Karen; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Mertens, Robert P.; Borghs, Gustaaf

• Book ID: 120630584
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 312 KB
• Volume: 32
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2010.2089493