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Recombination via point defects and their complexes in solar silicon

โœ Scribed by Peaker, A. R.; Markevich, V. P.; Hamilton, B.; Parada, G.; Dudas, A.; Pap, A.; Don, E.; Lim, B.; Schmidt, J.; Yu, L.; Yoon, Y.; Rozgonyi, G.

Book ID
118263507
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
592 KB
Volume
209
Category
Article
ISSN
0031-8965

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โœ M Suezawa; N Fukata; Y Takada; R Taniguchi; F Hori; R Oshima ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 170 KB

We studied the properties of irradiation-induced point defects and thermal equilibrium vacancies in Si by detecting hydrogen interacting with these point defects. First, we show the irradiation temperature dependence of the point defect concentration. We studied the optical absorption spectra of com