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Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers
✍ Scribed by Nakazawa, S.; Ueda, T.; Inoue, K.; Tanaka, T.; Ishikawa, H.; Egawa, T.
- Book ID
- 114617959
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 630 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0018-9383
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