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Recent progress in CdTe and CdZnTe detectors

✍ Scribed by Takahashi, T.; Watanabe, S.

Book ID: 111891734
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 288 KB
Volume: 48
Category: Article
ISSN: 0018-9499
DOI: 10.1109/23.958705

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## Abstract Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, V~Cd~ and Te~Cd~ are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot. We demonstrate that (∼2÷3 kT) vari