๐”– Bobbio Scriptorium
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Recent developments in metalorganic precursors for metalorganic chemical vapour deposition

โœ Scribed by A.C. Jones; S.A. Rushworth; J. Auld


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
541 KB
Volume
146
Category
Article
ISSN
0022-0248

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Low-temperature metalorganic chemical va
โœ Shinji Fujieda; Masashi Mizuta; Yoshishige Matsumoto ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 559 KB

Aluminium nitride (AIN) thin films have been grown by low-temperature metalorganic chemical vapour deposition (MOCVD) to passivate GaAs. By utilizing hydrazine (N2H4), highly resistive amorphous-like AIN films were obtained at growth temperatures around 400 "C. At the AIN-GaAs interface, three deep