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Realizing a family of transition-metal-oxide memristors based on volatile resistive switching at a rectifying metal/oxide interface

✍ Scribed by Yang, M; Qin, N; Ren, L Z; Wang, Y J; Yang, K G; Yu, F M; Zhou, W Q; Meng, M; Wu, S X; Bao, D H; Li, S W


Book ID
121461914
Publisher
Institute of Physics
Year
2013
Tongue
English
Weight
543 KB
Volume
47
Category
Article
ISSN
0022-3727

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