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Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields

✍ Scribed by Qianghua Xie; P. Chen; A. Kalburge; T.R. Ramachandran; A. Nayfonov; A. Konkar; A. Madhukar


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
627 KB
Volume
150
Category
Article
ISSN
0022-0248

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