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Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments

✍ Scribed by Danilewsky, A. N. ;Wittge, J. ;Hess, A. ;Cröll, A. ;Rack, A. ;Allen, D. ;McNally, P. ;dos Santos Rolo, T. ;Vagovič, P. ;Baumbach, T. ;Garagorri, J. ;Elizalde, M. R. ;Tanner, B. K.

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 344 KB
Volume: 208
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201184264

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✦ Synopsis

Abstract

We describe a rapid digital system for X‐ray diffraction imaging and demonstrate its application to the real‐time identification of edge defects in a silicon wafer that had been subjected to rapid thermal annealing. The application of the system to the in situ study of slip nucleation at the location of mechanical wafer defects, indents and a thermocouple, and the subsequent dislocation dynamics is presented.

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