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Real-time control of AlN incorporation in epitaxial Hf1 − xAlxN using high-flux, low-energy (10–40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target

✍ Scribed by B.M. Howe; E. Sammann; J.G. Wen; T. Spila; J.E. Greene; L. Hultman; I. Petrov


Book ID
108049185
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
602 KB
Volume
59
Category
Article
ISSN
1359-6454

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