Impact of tunnel-oxide nitridation on en
โ
J. De Blauwe; D. Wellekens; J. Van Houdt; R. Degraeve; L. Haspeslagh; G. Groesen
๐
Article
๐
1997
๐
Elsevier Science
๐
English
โ 325 KB
Threshold-voltage window closure in non-volatile memory (NVM) devices is known to originate from charge trapping in the dielectric underneath the floating gate (FG dielectric). In this paper, it is shown that oxide nitridation lowers the generation rate of neutral electron traps and, consequently, r