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Reactive epitaxy of cobalt disilicide on Si(100)

✍ Scribed by M. V. Gomoyunova; I. I. Pronin; D. A. Valdaitsev; N. S. Faradzhev

Book ID
110131487
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
351 KB
Volume
44
Category
Article
ISSN
1063-7834

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We report on an X-ray diffraction study of the epitaxial growth of thick films of cobalt and nickel disilicides on silicon. The lattice parameters both parallel and normal to the interface are measured at room temperature (RT) for various samples prepared by solid phase epitaxy or reactive depositio